STH320N4F6-2 datasheet(4/19 Pages) STMICROELECTRONICS

Part #	STH320N4F6-2

Description	N-channel 40 V, 1.1 mΩ typ., 200 A, H²PAK-2, H²PAK-6 STripFET™ VI DeepGATE™ Power MOSFET

PDF	19 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 19 page

Electrical characteristics

STH320N4F6-2, STH320N4F6-6

4/19

Doc ID 024221 Rev 1

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

(VGS= 0)

ID = 250 µA

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 40 V,

VDS = 40 V, TC=125 °C

100

µA

IGSS

Gate body leakage

current (VDS = 0)

VGS = ± 20 V

± 100

VGS(th)

Gate threshold voltage VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 80 A

1.1

1.3

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 15 V, f = 1 MHz, VGS =0

13800

1870

1095

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD= 20 V, ID= 160 A,

VGS= 10 V

(see Figure 14)

240

75.2

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

Rise time

VDD = 20 V, ID = 80 A

RG= 4.7 Ω, VGS= 10 V,

(see Figure 13)

td(off)

Turn-off delay time

Fall time

190

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