STL120N8F7 datasheet(4/14 Pages) STMICROELECTRONICS

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Electrical characteristics

STL120N8F7

4/14

DocID027246 Rev 2

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 80 V

µA

IGSS

Gate-body leakage

current

VDS = 0 V, VGS = 20 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 11.5 A

3.7

4.4

mΩ

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz, VGS = 0 V

4570

Coss

Output capacitance

800

Crss

Reverse transfer

capacitance

Total gate charge

VDD = 40 V, ID = 23 A,

VGS = 10 V (see Figure 14:

"Gate charge test circuit")

Qgs

Gate-source charge

24.7

Qgd

Gate-drain charge

14.8

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 40 V, ID = 11.5 A

RG = 4.7

Ω, VGS = 10 V (see

Figure 13: "Switching times test

circuit for resistive load" and

Figure 18: "Switching time

waveform")

34.5

Rise time

16.8

td(off)

Turn-off delay time

Fall time

15.4

Table 7: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VSD(1)

Forward on voltage

VGS = 0 V, ISD = 23 A

1.2

trr

Reverse recovery time

ISD = 23 A, di/dt = 100 A/µs,

VDD = 64 V (see Figure 15: "Test

circuit for inductive load

switching and diode recovery

times")

48.6

Qrr

Reverse recovery

charge

65.6

IRRM

Reverse recovery

current

2.7

Notes:

(1) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

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