STM32F303VE datasheet(121/184 Pages) STMICROELECTRONICS

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STM32F303xD STM32F303xE

Electrical characteristics

161

Figure 35. NAND controller write timings

Table 58. Switching characteristics for NAND Flash read cycles(1) (2)

1. Based on characterization, not tested in production.

2. CL = 30 pF

Symbol

Parameter

Min

Max

Unit

tw(NOE)

FMC_NOE low width

6THCLK

6THCLK + 2

tsu(D-NOE)

FMC_D[15-0] valid data before

FMC_NOE high

THCLK+5

th(NOE-D)

FMC_D[15-0] valid data after FMC_NOE

high

td(ALE-NOE)

FMC_ALE valid before FMC_NOE low

6THCLK -0.5

th(NOE-ALE)

FMC_NWE high to FMC_ALE invalid

6THCLK-1

Table 59. Switching characteristics for NAND Flash write cycles(1)

1. Based on characterization, not tested in production.

Symbol

Parameter

Min

Max

Unit

tw(NWE)

FMC_NWE low width

4THCLK-0.5 4THCLK + 1.5

tv(NWE-D)

FMC_NWE low to FMC_D[15-0] valid

3.5

th(NWE-D)

FMC_NWE high to FMC_D[15-0] invalid

3THCLK -1.5

td(D-NWE)

FMC_D[15-0] valid before FMC_NWE

high

5THCLK – 3

td(ALE_NWE)

FMC_ALE valid before FMC_NWE low

4THCLK+2

th(NWE-ALE)

FMC_NWE high to FMC_ALE invalid

2THCLK-1

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