STB45N50DM2AG datasheet(4/15 Pages) STMICROELECTRONICS

4 / 15 page

Electrical characteristics

STB45N50DM2AG

4/15

DocID028417 Rev 1

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 5: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

500

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 500 V

µA

VGS = 0 V, VDS = 500 V,

Tcase = 125 °C

100

IGSS

Gate-body leakage

current

VDS = 0 V, VGS = ±25 V

±5

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 17.5 A

0.070

0.084

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz, VGS = 0 V

2600

Coss

Output

capacitance

140

Crss

Reverse transfer

capacitance

2.4

Coss

eq.

(1)

Equivalent output

capacitance

VDS = 0 to 400 V, VGS = 0 V

220

Intrinsic gate

resistance

f = 1 MHz, ID = 0 A

Total gate charge

VDD = 400 V, ID = 35 A, VGS = 10 V (see

Figure 15: "Test circuit for gate charge

behavior")

Qgs

Gate-source

charge

13.3

Qgd

Gate-drain charge

Notes:

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on

delay time

VDD = 250 V, ID = 17.5 A RG = 4.7 Ω,

VGS = 10 V (see Figure 14: "Test circuit for

resistive load switching times" and Figure 19:

"Switching time waveform")

Rise time

9.4

td(off)

Turn-off

delay time

73.5

Fall time

9.8

STB45N50DM2AG Datasheet(PDF) 4 Page - STMicroelectronics

STB45N50DM2AG Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Datasheet Download

Link URL