STD7NM64N datasheet(4/16 Pages) STMICROELECTRONICS

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Electrical characteristics

STD7NM64N

4/16

DocID025081 Rev 1

Electrical characteristics

(TC = 25 °C unless otherwise specified).

Table 5. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

(VGS = 0)

ID = 1 mA

640

IDSS

Zero gate voltage

drain current

VDS = 640 V

µA

VDS = 640 V, TC=125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

±100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 2.5 A

0.88

1.05

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

-363

Coss

Output capacitance

24.6

Crss

Reverse transfer

capacitance

-1.1

Coss eq.

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS.

Equivalent output

capacitance

VDS = 0 to 480 V, VGS = 0

130

Intrinsic gate

resistance

f = 1 MHz, ID=0

5.4

Total gate charge

VDD = 480 V, ID = 5 A,

VGS = 10 V

(see Figure 14)

-14

Qgs

Gate-source charge

2.7

Qgd

Gate-drain charge

7.7

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