IPF09N03LA datasheet(3/9 Pages) INFINEON

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IPF09N03LA

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

1240

1649

Output capacitance

C oss

530

704

Reverse transfer capacitance

Crss

122

Turn-on delay time

t d(on)

8.7

Rise time

t r

8.5

Turn-off delay time

t d(off)

-22

Fall time

t f

4.2

6.2

Gate Charge Characteristics

Gate to source charge

Q gs

-4

Gate charge at threshold

Q g(th)

2.0

2.6

Gate to drain charge

Q gd

3.1

4.7

Switching charge

Q sw

-5

Gate charge total

Q g

-10

Gate plateau voltage

V plateau

3.5

Gate charge total, sync. FET

Q g(sync)

V DS=0.1 V,

V GS=0 to 5 V

Output charge

Q oss

V DD=15 V, V GS=0 V

-11

Reverse Diode

Diode continous forward current

I S

Diode pulse current

I S,pulse

350

Diode forward voltage

V SD

V GS=0 V, I F=50 A,

T j=25 °C

1.0

1.2

Reverse recovery charge

Q rr

V R=15 V, I F=I S,

di F/dt =400 A/µs

5) See figure 16 for gate charge parameter definition

T C=25 °C

Values

V GS=0 V, V DS=15 V,

f =1 MHz

V DD=15 V, V GS=10 V,

I D=25 A, R G=2.7 Ω

V DD=15 V, I D=25 A,

V GS=0 to 5 V

Rev. 1.2

page 3

2003-12-19

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