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STW60NM50N Datasheet(PDF) 3 Page - STMicroelectronics

Part # STW60NM50N
Description  N-channel 500 V, 0.035 Ω, 68 A, MDmesh™ II Power MOSFET in a TO-247 package
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW60NM50N Datasheet(HTML) 3 Page - STMicroelectronics

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DocID023157 Rev 2
3/13
STW60NM50N
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate- source voltage
±25
V
ID
Drain current (continuous) at TC = 25 °C
68
A
ID
Drain current (continuous) at TC = 100 °C
43
A
IDM
(1)
1.
Pulse width limited by safe operating area.
Drain current (pulsed)
272
A
PTOT
Total dissipation at TC = 25 °C
446
W
dv/dt (2)
2.
ISD ≤ 68 A, di/dt ≤ 400 A/µs, VDD =80% V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
Tstg
Storage temperature
–55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
0.28
°C/W
Rthj-amb
Thermal resistance junction-ambient max
50
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
11
A
EAS
Single pulse avalanche energy
(starting Tj=25 °C, ID=IAS, VDD=50 V)
551
mJ



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