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STW65N80K5 Datasheet(PDF) 1 Page - STMicroelectronics |
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STW65N80K5 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() October 2015 DocID027717 Rev 2 1/12 This is information on a product in full production. www.st.com STW65N80K5 N-channel 800 V, 0.07 Ω typ., 46 A MDmesh™ K5 Power MOSFET in a TO-247 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STW65N80K5 800 V 0.08 Ω 46 A 446 W Industry’s lowest RDS(on) x area Industry’s best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected Applications Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STW65N80K5 65N80K5 TO-247 Tube TO-247 1 2 3 |
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