SLE66C161PEC datasheet(3/8 Pages) INFINEON

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SLE 66C161PE

Preliminary - Short Product Information

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02.04

8/16-Bit Security Controller with enhanced instruction set for large

memories in 0.22µm CMOS Technology 48-Kbyte ROM, 2304 Bytes

RAM, 16-Kbyte EEPROM

Features

• 8/16-bit microcomputer in 0.22 µm CMOS technology

• Instruction set opcode compatible with standard

SAB 8051 processor

• Downward compatibility to existing SLE 66CxxxP

products for existing masks without using the

new features

• Addressable memory up to 16 Mbyte

• Additional enhanced instructions for direct

physical memory access of >64kByte

• Typically saves up to 90% code space and

increases execution speed up to 80%.

• Dedicated, non-standard architecture with execution

time 6 times faster than standard SAB 8051

processor at same external clock. (Up to 18 times

faster using internal frequency PLL x 3 compared to

external clock).

• 48 Kbytes User ROM for application programs

• 16 Kbytes MicroSlim-EEPROM for increased

memory requirements in mobile applications

• 2 Kbytes XRAM, 256 bytes internal RAM

• Enhanced Memory Management and Protection

Unit (MMU) with application and user defined

segments

• DES in software

• True Random Number Generator with Firmware test

function

• CRC Module

• 16-bit Interrupt Module

• Code executions during E²-programming for faster

personalization

• EEPROM programming voltage generated on chip

• Internal Clock with up to 33 MHz:

Programmable internal frequency (PLL x1, x2, x3, x4

and free running mode(s)).

• Adjustable internal frequency according to

available power or required performance

• Increased internal clock frequency for maximum

performance

• Internal frequency is automatically adjusted to

guarantee a given limited power consumption

• Two 16-bit Autoreload Timer

• Power saving sleep mode

• Ext. Clock freq. 1 up to 7.5 MHz

• UART for handling serial interface in accordance

with ISO/IEC 7816 part 3 supporting transmission

protocols T=1 and T=0

• Supply voltage range:1.8 V, 3.0 V, 5.0 V

• Support of current consumption limits by GSM / UICC

applications

< 10 mA @ 5.5 V

< 6 mA @ 3.3 V

< 4 mA @ 1.98 V

• Operating Temperature range: -25 to +85°C

• Storing temperature range: –40° to +125°C

• ESD protection larger than 6 kV (HBM)

MicroSlim-EEPROM

• Typical Erase + Write time ≤ 2.9 ms

• Enhanced ECC module controlled by OS

• Reading and programming byte by byte

• Platform prepared for flash-like erasing of E²-segments

up to 2 kB

• Flexible page mode for 1 to 64 bytes write/erase

operation

• 32 bytes security area (OTP)

• Fast personalization mode ≤ 1.0 ms

• Minimum of 500.000 write/erase cycles @ 25°C per

page. Maximum of 16.500.000 write/erase cycles per

sector

• Typical data retention of 10 years @ 25°C

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