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MMBTA06 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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MMBTA06 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 4 page ![]() SMBTA06/ MMBTA06 Feb-20-2002 1 NPN Silicon AF Transistor High breakdown voltage Low collector-emitter saturation voltage Complementary type: SMBTA56 (PNP) MMBTA56 (PNP) 1 2 3 VPS05161 Type Marking Pin Configuration Package SMBTA06/ MMBTA06 s1G 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 80 V Collector-base voltage VCBO 80 Emitter-base voltage VEBO 4 DC collector current IC 500 mA Peak collector current ICM 1 A Base current IB 100 mA Peak base current IBM 200 Total power dissipation , TS = 79 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 215 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance |
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