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SPU07N20 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # SPU07N20
Description  SIPMOS Power Transistor
PDF  8 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPU07N20 Datasheet(HTML) 1 Page - Infineon Technologies AG

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Data Sheet
1
05.99
SIPMOS
® Power Transistor
Product Summary
Drain source voltage
200
VDS
V
Drain-Source on-state resistance
Ω
0.4
RDS(on)
ID
Continuous drain current
7
A
Features
• N channel
• Enhancement mode
• Avalanche rated
• dv/dt rated
Pin 1
Pin 2
Pin 3
G
D
S
Packaging
Type
Package
Ordering Code
SPD07N20
Tape and Reel
P-TO252
Q67040-S4120-A2
SPU07N20
Tube
Q67040-S4112-A2
P-TO251
Maximum Ratings, at
Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Unit
Value
Continuous drain current
TC = 25 ˚C
TC = 100 ˚C
7
4.5
ID
A
Pulsed drain current
TC = 25 ˚C
IDpulse
28
Avalanche energy, single pulse
ID = 7 A, VDD = 50 V, RGS = 25 Ω
mJ
EAS
120
Avalanche energy, periodic limited by
Tjmax
4
EAR
Reverse diode d
v/dt
IS = 7 A, VDS = 160 V, di/dt = 200 A/µs,
Tjmax = 175 ˚C
d
v/dt
6
kV/µs
Gate source voltage
VGS
±20
V
Power dissipation
TC = 25 ˚C
Ptot
40
W
Operating and storage temperature
Tj , Tstg
˚C
-55... +175
55/150/56
IEC climatic category; DIN IEC 68-1
Preliminary Data
SPD 07N20


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