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SPU07N60S5 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # SPU07N60S5
Description  Cool MOS??Power Transistor
PDF  11 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPU07N60S5 Datasheet(HTML) 1 Page - Infineon Technologies AG

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2004-03-30
Rev. 2.1
Page 1
SPU07N60S5
SPD07N60S5
Cool MOS™ Power Transistor
VDS
600
V
RDS(on)
0.6
Ω
ID
7.3
A
Feature
• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO-251 and TO-252
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
P-TO251.
P-TO252.
1
3
2
1
3
2
Type
Package
Ordering Code
SPU07N60S5
P-TO251.
Q67040-S4196
SPD07N60S5
P-TO252.
Q67040-S4186
Marking
07N60S5
07N60S5
Maximum Ratings
Parameter
Symbol
Value
Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
7.3
4.6
A
Pulsed drain current, t
p limited by Tjmax
ID puls
14.6
Avalanche energy, single pulse
ID = - A, VDD = 50 V
EAS
230
mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID = 7.3 A, VDD = 50 V
EAR
0.5
Avalanche current, repetitive tAR limited by Tjmax IAR
7.3
A
Gate source voltage
VGS
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
Power dissipation, TC = 25°C
Ptot
83
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C


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