CSD87502Q2 datasheet(3/13 Pages) TI

3 / 13 page

CSD87502Q2

www.ti.com

SLPS560 – DECEMBER 2015

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-source voltage

VGS = 0 V, ID = 250 μA

IDSS

Drain-to-source leakage current

VGS = 0 V, VDS = 24 V

μA

IGSS

Gate-to-source leakage current

VDS = 0 V, VGS = 20 V

μA

VGS(th)

Gate-to-source threshold voltage

VDS = VGS, ID = 250 μA

1.2

1.6

2.0

VGS = 3.8 V, ID = 4 A

42.0

60.0

Ω

RDS(on)

Drain-to-source on-resistance

VGS = 4.5 V, ID = 4 A

35.5

42.0

Ω

VGS = 10 V, ID = 4 A

27.0

32.4

Ω

gfs

Transconductance

VDS = 3 V, ID = 4 A

DYNAMIC CHARACTERISTICS

Ciss

Input capacitance

272

353

Coss

Output capacitance

VGS = 0 V, VDS = 15 V, ƒ = 1 MHz

Crss

Reverse transfer capacitance

Series gate resistance

6.9

Ω

Gate charge total (4.5 V)

2.2

2.9

Gate charge total (10 V)

4.6

6.0

Qgd

Gate charge gate to drain

VDS = 15 V, ID = 4 A

0.5

Qgs

Gate charge gate to source

1.0

Qg(th)

Gate charge at Vth

0.5

Qoss

Output charge

VDS = 15 V, VGS = 0 V

1.4

td(on)

Turn on delay time

Rise time

VDS = 15 V, VGS = 5 V,

IDS = 4 A, RG = 0 Ω

td(off)

Turn off delay time

Fall time

DIODE CHARACTERISTICS

VSD

Diode forward voltage

ISD = 4 A, VGS = 0 V

0.85

1.0

Qrr

Reverse recovery charge

4.0

VDS= 15 V, IF = 4 A,

di/dt = 300 A/

μs

trr

Reverse recovery time

6.4

5.2 Thermal Information

(TA = 25°C unless otherwise stated)

THERMAL METRIC

MIN

TYP

MAX

UNIT

Junction-to-ambient thermal resistance(1)

RθJA

°C/W

Junction-to-ambient thermal resistance(2)

185

(1)

Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.

(2)

Device mounted on FR4 material with minimum Cu mounting area.

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