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SPW52N50C3 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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SPW52N50C3 Datasheet(HTML) 2 Page - Infineon Technologies AG |
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2 / 11 page ![]() 2004-03-16 Rev. 2.0 Page 2 SPW52N50C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 400 V, ID = 52 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 0.3 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62 Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 500 - - V Drain-Source avalanche breakdown voltage V(BR)DS VGS=0V, ID=20A - 600 - Gate threshold voltage VGS(th) ID=2700µΑ, VGS=VDS 2.1 3 3.9 Zero gate voltage drain current IDSS VDS=500V, VGS=0V, Tj=25°C, Tj=150°C - - 0.5 - 25 250 µA Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA Drain-source on-state resistance RDS(on) VGS=10V, ID=30A, Tj=25°C Tj=150°C - - 0.06 0.16 0.07 - Ω Gate input resistance RG f=1MHz, open Drain - 0.7 - |
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