CTNS-4606S datasheet(1/7 Pages) SANKEN

Part #	CTNS-4606S

Description	Fast Recovery and High Power Diode

PDF	7 Pages

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Manufacturer	SANKEN [Sanken electric]

Direct Link	http://www.sanken-ele.co.jp/en

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VRM = 600 V, IF(AV) = 60 A, trr = 100 ns(max.)

Fast Recovery and High Power Diode

CTNS-4606S

CTNS-4606S-DS Rev.1.1

SANKEN ELECTRIC CO.,LTD.

1

Oct. 30, 2014

Features

The CTNS-4606S is a high power diode of the

low-noise and low loss which realize a peak reverse

voltage of 600 V. Typical forward voltage drop of 1.15

V is realized by optimizing the relationship of trade-off

between VF and trr. It has the characteristics suit for PFC

circuit of DCM and CRM.

The low thermal resistance package achieves high

performance in terms of heat dissipation.

 V

RM------------------------------------------------------- 600V

 V

F------------------------------------ 1.3 V max. (IF = 30 A)

 I

F(AV)------------------------------------------------------- 60 A

 t

rr -------------------------------------------------- 100 ns max.

(IF = 500 mA, IRP = 1000 mA, 75 % of R.P.)

Applications

 For PFC Circuit (DCM,CRM)

 For Large Current Secondary Side Rectifier

 For DC-DC Converter, etc.

Package

TO3P-3L

Not to scale

Absolute Maximum Ratings

 Unless otherwise specified, T

A is 25 °C

Parameter

Symbol

Rating

Unit

Notes

Peak Repetitive Reverse

Voltage

VRM

600

V

Average Forward Current

IF(AV)

60

A

Surge Forward Current

IFSM

250

A

10 ms

Half sinewave, one shot

I

2t Limiting Value

I

2t

312.5

A

2s

1 ms ≤ t ≤10 ms

Junction Temperature

Tj

−40 to 150

°C

Storage Temperature

Tstg

−40 to 150

°C

Electrical Characteristics

 Unless otherwise specified, T

A is 25 °C

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Forward Voltage Drop

VF

IF = 30 A

―

1.15

1.3

V

Reverse Leakage Current

IR

VR = VRM

―

50

µA

Reverse Leakage Current

Under High Temperature

H･IR

VR = VRM, Tj = 150 °C

―

20

mA

Reverse Recovery Time

trr1

IF = IRP = 500 mA,

Tj = 25 °C,

90 % recovery point

―

150

ns

trr2

IF = 500mA,IRP = 1000 mA,

Tj = 25 °C,

75 % recovery point

―

100

ns

Thermal Resistance*

Rth(j-c)

―

1.0

°C/W

* Rth(j-c) is thermal resistance between junction and case. Case temperature (TC) is measured at the under of the screw

hole of case.

http://www.sanken-ele.co.jp/en/

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A

(4)

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