RoHS Device

General Purpose Transistor

Page 1

REV: A

Features

- Small flat package

- High speed switching time.

1

Base

3

Emitter

Collector

2

QW-BTR43

Part No.

Range

2SC2873O-G

70-140

120-240

2SC2873Y-G

Classification Of hFE

Marking

MO

MY

Company reserves the right to improve product design , functions and reliability without notice.

1 : BASE

2 : COLLECTOR

3 : EMITTER

Dimensions in inches and (millimeter)

SOT-89-3L

0.181(4.60)

0.173(4.40)

0.102(2.60)

0.091(2.30)

0.118(3.00)

TYP.

0.063(1.60)

0.055(1.40)

0.047(1.20)

0.035(0.90)

0.020(0.52)

0.013(0.32)

0.017(0.44)

TYP.

0.060(1.50)

0.167(4.25)

0.155(3.94)

0.014(0.35)

0.023(0.58)

0.016(0.40)

REF.

0.061(1.55)

1

2

3

Emitter-Base voltage

Collector-Emitter voltage

Collector-Base voltage

Collector current

Symbol

Parameter

Value

Unit

V

V

V

5

50

50

2

A

500

mW

Collector power dissipation

°C/W

250

°C

Junction temperature

150

°C

Tstg

Storage temperature

-55~+150

Symbol

Parameter

Conditions

Min

Max

Unit

Collector-Base breakdown voltage

0.1

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-Emitter saturation voltage

Transition frequency

Collector output capacitance

Cob

50

50

5

0.1

240

70

0.5

30

V

V

V

µA

µA

V

P

F

20

Base-Emitter saturation voltage

1.2

V

Typ

120

- Low collector-emitter saturation voltage.

Circuit Diagram

Thermal resistance from

junction to ambient