DMN4800LSSQ

Document number: DS37496 Rev. 1 - 2

2 of 6

www.diodes.com

March 2016

© Diodes Incorporated

DMN4800LSSQ

Characteristic

Symbol

Value

Units

Drain-Source Voltage

30

V

Gate-Source Voltage

25

V

Steady

State

8.6

6.3

A

t<10s

11.8

9.0

A

Maximum Body Diode Forward Current (Note 7)

2.4

A

Pulsed Drain Current (Note 8)

50

A

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 6)

1.46

W

0.9

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

86

°C/W

t<10s

46

Total Power Dissipation (Note 7)

1.7

W

1.0

Thermal Resistance, Junction to Ambient (Note 7)

Steady state

75

°C/W

t<10s

40

Thermal Resistance, Junction to Case (Note 7)

15

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage

30





V

Zero Gate Voltage Drain Current





1

μA

Gate-Source Leakage





100

nA

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

0.8

1.2

1.6

V

Static Drain-Source On-Resistance



11

14

14

20

m

Ω

Forward Transconductance



8



S

Diode Forward Voltage



0.72

0.94

V

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance



798



pF

f = 1.0MHz

Output Capacitance



128



pF

Reverse Transfer Capacitance



122



pF

Gate Resistance



1.37



Ω

Total Gate Charge



8.7



nC

Gate-Source Charge



1.7



Gate-Drain Charge



2.4



Turn-On Delay Time



5.03



ns

Rise Time



4.50



Turn-Off Delay Time



26.33



Fall Time



8.55



Notes:

6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.

8. Repetitive rating, pulse width limited by junction temperature.

9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to product testing.