MICROWAVE CORPORATION

8 - 101

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

8

HMC326MS8G

v04.1203

Outline Drawing

Absolute Maximum Ratings

GaAs InGaP HBT MMIC DRIVER

AMPLIFIER, 3.0 - 4.5 GHz

NOTES:

1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEADFRAME MATERIAL: COPPER ALLOY

3. LEADFRAME PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED

TO PCB RF GROUND.

Collector Bias Voltage (Vcc)

+5.5 Vdc

Control Voltage Range (Vpd)

+5.5 Vdc

RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc)

+20 dBm

Junction Temperature

150 °C

Continuous Pdiss (T = 85 °C)

(derate 11.49 mW/°C above 85 °C)

0.747 W

Thermal Resistance

(junction to ground paddle)

87 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C