MMBT5551-G datasheet(2/5 Pages) COMCHIP

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QW-BTR20

General Purpose Transistor

REV:B

Fig.1 - Static Characteristic

Collector-Emitter Voltage, VCE (V)

Collector Current, Ic (mA)

200

Fig.2 - hFE — IC

100

500

IB=20uA

30uA

40uA

50uA

60uA

70uA

80uA

90uA

COMMON

EMITTER

Ta=25°C

COMMON EMITTER

VCE=5V

Ta=100°C

Ta=25°C

100

Company reserves the right to improve product design , functions and reliability without notice.

RATING AND CHARACTERISTIC CURVES (MMBT5551-G)

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Max.

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

IC=100μA, IE=0

IC=1mA, IB=0

IE=10μA, IC=0

VCB=120V, IE=0

VEB=4V, IC=0

VCE=5V, IC=1mA

VCE=5V, IC=10mA

VCE=5V, IC=50mA

IC=50mA, IB=5mA

VCE=10V, IC=10mA, f=100MHz

V(BR)CBO

V(BR)EBO

ICBO

IEBO

180

160

100

200

0.15

MHZ

hFE(1)*

hFE(2)*

hFE(3)*

Typ.

VCE(sat)1*

VBE(sat)1*

IC=10mA, IB=1mA

VCE(sat)2*

VBE(sat)2*

0.20

300

Collector output capacitance

VCB=10V, IE=0, f=1MHz

Cob

V(BR)CEO*

*Pulse test: pulse width ≤300µs, duty cycle≤2.0%

Comchip Technology CO., LTD.

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