TBAV99

1

Switching Diodes Silicon Epitaxial Planar

TBAV99

TBAV99

TBAV99

TBAV99

Start of commercial production

2014-12

1.

1.

1.

1. Applications

Applications

Applications

Applications

•

Ultra-High-Speed Switching

2.

2.

2.

2. Packaging and Internal Circuit

Packaging and Internal Circuit

Packaging and Internal Circuit

Packaging and Internal Circuit

SOT23

1: Anode 1

2: Cathode 2

3: Cathode1 / Anode 2

3.

3.

3.

3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

= 25

= 25

= 25 





))))

Characteristics

Peak reverse voltage

Reverse voltage

Peak forward current

Average rectified current

Power dissipation

Power dissipation

Non-repetitive peak forward surge current

Junction temperature

Storage temperature

Symbol

Note

(Note 1)

(Note 1)

(Note 2)

(Note 1), (Note 3)

Rating

85

80

300

100

150

320

2

125

-55 to 125

Unit

V

mA

mW

mW

A





Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Unit rating. Total rating = Unit rating × 70 %

Note 3: Measured with a 10 ms pulse.

2015-11-26

Rev.2.0

©2015 Toshiba Corporation