MICROWAVE CORPORATION

8 - 276

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

8

Outline Drawing

Absolute Maximum Ratings

Collector Bias Voltage (Vcc1, Vcc2)

+6.0 Vdc

RF Input Power (RFin)(Vs = +5.0 Vdc)

+30 dBm

Junction Temperature

150 °C

Continuous Pdiss (T = 85 °C)

(derate 32 mW/°C above 85 °C)

2.08 W

Thermal Resistance

(junction to ground paddle)

31 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

HMC461LP3

InGaP HBT 1 Watt High IP3

AMPLIFIER, 1.7 - 2.2 GHz

v01.0604

NOTES:

1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY

3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE

6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.

PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.

7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.

8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED

TO PCB RF GROUND.

9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB

LAND PATTERN.

Specifications and data reflect HMC461LP3 measured with external baluns in a balanced

amplifier configuration optimized for 1.85 - 2.2 GHz per application circuit herein.

Contact HMC Applications for 1.7 - 1.85 GHz performance optimization.