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2SC5658-Q Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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2SC5658-Q Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 5 page ![]() Version: B1602 Document Number : REMAKRS hFE values are classified as follows ELECTRICAL SPECIFICATIONS (Ta = 25°C unless otherwise noted) SYMBOL MIN UNIT PARAMETERS TYP. MAX Collector-Base Breakdown Voltage IC=-50μA, IE=0 V(BR)CBO 60 V Collector-Emitter Breakdown Voltage IC=-1mA, IB=0 V(BR)CEO 50 V Emitter-Base Breakdown Voltage IE=-50μA, IC=0 V(BR)EBO 7 V Collector Cut-Off Currect VCB=-60V, IE=0 ICBO μA 0.1 Emitter Cut-Off Currect VEB=-6V, IC=0 IEBO μA 0.1 DC Current Transfer Ration VCB=-6V, IC=1mA hFE 120 560 Collector-Emitter Saturation Voltage IC=-50mA , IB=-5mA VCE(sat) V 0.4 Transition Frequency VCE=-12V, IC=2mA, f=30MHz fT 180 MHz Output Capacitance VCB=-12V, IE=0mA, f=1MHz Cob 3.5 pF Rank Q R S Range 120~270 180~390 270~560 Small Signal NPN Bipolar Transistor Taiwan Semiconductor 2SC5658-Q/R/S |
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