2N7002 datasheet(1/2 Pages) DGNJDZ

Part #	2N7002

Description	Voltage controlled small signal switch

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Manufacturer	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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SOT-23 Plastic-Encapsulate

MOSFETS

2N7002

MOSFET (N-Channel)

FEATURES

High density cell design for low RDS(ON)

Voltage controlled small signal switch

Rugged and reliable

High saturation current capability

Marking: 7002

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

M

in

T

yp

M

ax

Unit

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0 V, ID=250

µA

60

Gate-Threshold Voltage

Vth(GS)

VDS=VGS, ID=250

µA

1

̀

V

Gate-body Leakage

lGSS

VDS=0 V, VGS=

±25 V

±80

nA

Zero Gate Voltage Drain Current

IDSS

VDS=60 V, VGS=0 V

80

nA

On-state Drain Current

ID(ON)

VGS=10 V, VDS=7 V

500

mA

VGS=10 V, ID=500

mA

7

Drain-Source On-Resistance

RDS(on)

VGS=5 V, ID=50

mA

7

Ω

Forward Trans conductance

gfs

VDS=10 V, ID=200

mA

80

ms

VGS=10V, ID=500

mA

0.5

3.75

V

Drain-source on-voltage

VDS(on)

VGS=5V, ID=50

mA

0.05

0.375

V

Diode Forward Voltage

VSD

IS=115mA, VGS=0 V

0.55

1.2

V

Input Capacitance

Ciss

50

Output Capacitance

Coss

25

Reverse Transfer Capacitance

Crss

VDS=25V, VGS=0V, f=1MHz

5

pF

SWITCHING TIME

Turn-on Time

td(on)

20

Turn-off Time

td(off)

VDD=25 V, RL=50

ID=500mA,VGEN=10 V

RG=25

40

ns

SOT-23

1. GATE

2. SOURCE

3. DRAIN

*

D

,Apr,2012

*These parameters have no way to verify.

Ω

,

Ω

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDS

60

V

Continuous Drain Current

ID

0.115

A

Power Dissipation

PD

0.225

W

Thermal Resistance from Junction to Ambient

RθJA

556

℃/W

Junction Temperature

TJ

150

Storage Temperature

Tstg

-50 ~+150

℃

DONGGUAN NANJING ELECTRONICS LTD.,

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