2SD965 datasheet(1/3 Pages) DGNJDZ

Part #	2SD965

Description	NPN Silicon Epitaxial Planar Transistor

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Manufacturer	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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2SD965

NPN Silicon Epitaxial Planar Transistor

for low-frequency power and stroboscope

applications.

The transistor is subdivided into three

groups P, Q and R, according to its DC

current gain.

On special request, these transistors can be

manufactured in different pin configurations.

Features

․Low collector-emitter saturation voltage

․Satisfactory operation performances at high

TO-92 Plastic Package

efficiency with the low voltage power supply

Weight approx. 0.19g

Absolute Maximum Ratings (Ta=25

oC)

Symbol

Value

Unit

Collector Base Voltage

VCBO

40

V

Collector Emitter Voltage

VCEO

20

V

Emitter Base Voltage

VEBO

7

V

Peak Collector Current

ICP

8

A

Collector Current

IC

5

A

Power Dissipation

Ptot

750

mW

Junction Temperature

Tj

150

OC

Storage Temperature Range

TS

-55 to +150

OC

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2SD965 Datasheet(PDF) 1 Page - Nanjing International Group Co

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