HCS70R700T datasheet(3/7 Pages) SEMIHOW

3 / 7 page

Typical Characteristics

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

DS = 350V

DS = 140V

DS = 560V

Note : I

D = 6A

G, Total Gate Charge [nC]

048

0.0

0.4

0.8

1.2

1.6

2.0

2.4

GS = 20V

GS = 10V

Note : T

J = 25

D, Drain Current [A]

2468

-55

* Notes :

1. V

DS= 10V

2. 300us Pulse Test

GS, Gate-Source Voltage [V]

150

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.1

* Notes :

1. V

GS= 0V

2. 300us Pulse Test

SD, Source-Drain Voltage [V]

150

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom : 4.5 V

* Notes :

1. 300us Pulse Test

2. T

C = 25

DS, Drain-Source Voltage [V]

0.1

100

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

* Note ;

1. V

GS = 0 V

2. f = 1 MHz

rss

iss

oss

DS, Drain-Source Voltage [V]

HCS70R700T Datasheet(PDF) 3 Page - SemiHow Co.,Ltd.

HCS70R700T Datasheet(HTML) 3 Page - SemiHow Co.,Ltd.

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL