C unless otherwise specified

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

I

S

Continuous Source-Drain Diode Forward Current

--

--

22

A

I

SM

Pulsed Source-Drain Diode Forward Current

--

--

60

V

SD

Source-Drain Diode Forward Voltage

I

--

--

1.2

V

trr

Reverse Recovery Time

I

di

--

440

--

Qrr

Reverse Recovery Charge

--

5

--

BV

DSS

Drain-Source Breakdown Voltage

V

600

--

--

V

I

DSS

Zero Gate Voltage Drain Current

V

--

--

10

V

--

--

100

I

GSS

Gate-Body Leakage Current

V

30 V, V

--

--

100

Off Characteristics

C

iss

Input Capacitance

V

f = 1.0 MHz

--

1600

2100

C

oss

Output Capacitance

--

225

295

C

rss

Reverse Transfer Capacitance

--

14

18.5

Dynamic Characteristics

t

d(on)

Turn-On Time

V

R

--

48

104

t

r

Turn-On Rise Time

--

108

220

t

d(off)

Turn-Off Delay Time

--

176

360

t

f

Turn-Off Fall Time

--

50

108

Q

g

Total Gate Charge

V

V

--

41

53

nC

Q

gs

Gate-Source Charge

--

8

--

nC

Q

gd

Gate-Drain Charge

--

15

--

nC

Switching Characteristics

Source-Drain Diode Maximum Ratings and Characteristics

Notes ;

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. I

, Starting T

3. Pulse Test : Pulse Width

On Characteristics

V

GS

Gate Threshold Voltage

V

2.0

--

4.0

V

R

DS(ON)

Static Drain-Source

On-Resistance

V

--

0.13

0.15

g

FS

Forward Transconductance

V

--

18.8

--

S