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8N80 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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8N80 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 1 isc N-Channel Mosfet Transistor 8N80 · FEATURES · Drain Current –ID= 8A@ TC=25℃ · Drain Source Voltage- : VDSS=800V(Min) · Static Drain-Source On-Resistance : RDS(on) = 1.55Ω(Max) · Avalanche Energy Specified · Fast Switching · Simple Drive Requirements · DESCRITION · Designed for high efficiency switch mode power supply. · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ± 30 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Plused 32 A PD Total Dissipation @TC=25℃ 178 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ |
Similar Part No. - 8N80 |
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Similar Description - 8N80 |
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