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Optimum Technology Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

Functional Block Diagram

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at ((+1) 336-678-5570 or s

sales-support@rfmd.com.

Ordering Information

RF IN

GND1

GND2

RF OUT

RF OUT

RF OUT

1

2

3

4

6

5

8

7

10

9

13

12

11

16

14

15

RF2173

3V GSM POWER AMPLIFIER

Package Style: QFN, 16-Pin, 4x4

The RF2173 is a high power, high efficiency power amplifier module offer-

ing high performance in GSM or GPRS applications. The device is manu-

factured on an advanced GaAs HBT process, and has been designed for

use as the final RF amplifier in GSM hand-held digital cellular equipment

and other applications in the 800MHz to 950MHz band. On-board power

control provides over 70dB of control range with an analog voltage input,

and provides power down with a logic “low” for standby operation. The

device is self-contained with 50

: input and the output can be easily

matched to obtain optimum power and efficiency characteristics. The

RF2173 can be used together with the RF2174 for dual-band operation.

The device is packaged in an ultra-small plastic package, minimizing the

required board space.

Features

Voltage

3.5V

Control

tion

Applications

Handsets

Systems

Equipment

RF2173SQ

Sample bag with 25 pieces

RF2173SR

7” Reel with 100 pieces

RF2173TR13

13” Reel with 2500 pieces

RF2173PCBA-410

800MHz to 950MHz PCBA with 5-piece sample bag

DS130620

9

RoHS Compliant & Pb-Free Product