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2SC1975 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2SC1975
Description  Withstands worst overload conditions.
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC1975 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
1
isc Silicon NPN Power Transistor
2SC1975
DESCRIPTION
·Collector-Base Breakdown Voltage
: V(BR)CBO=160V(Min)
·Withstands worst overload conditions.
APPLICATIONS
·Design for used in transceiver power output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCER
Collector-Emitter Voltage
90
V
VEBO
Emitter-Base Voltage
5
V
ICM
Collector Current
3
A
PC
Total Power Dissipation
@ TC=25℃
12
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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