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RLS245 Datasheet(PDF) 1 Page - Nanjing International Group Co |
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RLS245 Datasheet(HTML) 1 Page - Nanjing International Group Co |
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1 / 2 page  Silicon Epitaxial Planar High Voltage Switching Diode Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 250 V Reverse Voltage VR 220 V Average Rectified Forward Current IF(AV) 200 mA Maximum Forward Current IFM 625 mA Surge Forward Current at t < 1 s and Tj = 25 oC IFSM 1000 mA Junction Temperature Tj 175 O C Storage Temperature Range Tstg - 65 to + 175 O C Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit Forward Voltage at IF = 200 mA VF - 1.5 V Leakage Current at VR = 220 V IR - 10 μA Reverse Breakdown Voltage at IR = 100 μA VBR 250 - V Capacitance at VF = VR = 0, f = 1 MHz Ctot - 3 pF Reverse Recovery Time from IF = IR = 20 mA trr - 75 ns LL-34 RLS245 ! ! ! |
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