2SK667 datasheet(1/2 Pages) ISC

Part #	2SK667

Description	Drain Source Voltage-: VDSS= 400V(Min)

PDF	2 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

2SK667

FEATURES

·Drain Current

–I

D=8A@ TC=25℃

·Drain Source Voltage-

: VDSS= 400V(Min)

DESCRIPTION

·Designed for high voltage, high speed power switching

applications such as switching regulators, converters,

solenoid and relay drivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

400

V

VGS

Gate-Source Voltage-Continuous

±20

V

ID

Drain Current-Continuous

8

A

PD

Total Dissipation @TC=25℃

80

W

TJ

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.25

℃/W

Rth j-a

Thermal Resistance, Junction to Ambient

62.5

℃/W

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2SK667 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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