CT2321-R3 datasheet(3/11 Pages) CTMICRO

3 / 11 page

CT Micro

Rev 3

Proprietary & Confidential

Page 3

Oct, 2014

CT2321-R3

P-Channel Enhancement MOSFET

Electrical Characteristics T

A = 25°C (unless otherwise specified)

Static Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID= -250µA

-20

IDSS

Drain-Source Leakage Current

VDS = -20V, VGS = 0V

-1

µ A

IGSS

Gate-Source Leakage Current

VGS = ±12V, VDS = 0V

±100

On Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

RDS(ON)

Drain-Source On-Resistance

VGS = -4.5V, ID = -3.8A

Ω

Fig 4

VGS = -2.5V, ID = -3.0A

Ω

VGS(TH)

Gate-Source Threshold Voltage

VGS = VDS, ID = -250µA

-0.4

-1.2

Fig 5

Dynamic Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

CISS

Input Capacitance

VDS = -10V ,

VGS = 0V,

f=1MHz

786

Fig 3

COSS

Output Capacitance

CRSS

Reverse Transfer Capacitance

Switching Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

TD(ON)

Turn-On Delay Time

VDS = -10V , VGS = -4.5V,

RG = 3 ,

ID = -3.8A

6.5

Fig

11 & 12

Rise Time

TD(OFF)

Turn-Off Delay Time

30.5

Fall Time

Total Gate Charge

VDS = -10V , .

VGS = -4.5V,

ID = -3.8A

8.7

Fig

9 & 10

QGS

Gate-Source Charge

1.65

QGD

Gate-Drain (Miller) Charge

2.5

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