CT2323-R3 datasheet(3/12 Pages) CTMICRO

3 / 12 page

CT Micro

Rev 4

Proprietary & Confidential

Page 3

Jun, 2015

CT2323-R3

P-Channel Enhancement MOSFET

Electrical Characteristics T

A = 25°C (unless otherwise specified)

Static Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID= -250µA

-20

IDSS

Drain-Source Leakage Current

VDS = -20V, VGS = 0V

-1

µ A

IGSS

Gate-Source Leakage Current

VGS = ±8V, VDS = 0V

±100

On Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

RDS(ON)

Drain-Source On-Resistance

VGS = -4.5V, ID = -4.7A

Ω

Fig 4

VGS = -2.5V, ID = -4.1A

Ω

VGS = -1.8V, ID = -2.0A

Ω

VGS(TH)

Gate-Source Threshold Voltage

VGS = VDS, ID = -250µA

-0.4

-1.0

Fig 5

Dynamic Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

CISS

Input Capacitance

VDS = -15V ,

VGS = 0V,

f=1MHz

1773

Fig 3

COSS

Output Capacitance

178

CRSS

Reverse Transfer Capacitance

140

Switching Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

TD(ON)

Turn-On Delay Time

VDS = -15V,

VGS = -10V,

RG = 6 ,

ID = -1.0A

4.75

Fig

11 & 12

Rise Time

TD(OFF)

Turn-Off Delay Time

Fall Time

20.5

Total Gate Charge

VDS = -15V , .

VGS = -10V,

ID = -4.2A

Fig

9 & 10

QGS

Gate-Source Charge

2.8

QGD

Gate-Drain (Miller) Charge

4.1

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