1.Gate 2. Drain 3. Source

2

1

2

3

1

3

D-PAK

I-PAK

HFD5N60F

HFU5N60F

* When mounted on the minimum pad size recommended (PCB Mount)

FEATURES

Absolute Maximum Ratings

T

unless otherwise specified

HFD5N60F / HFU5N60F

600V N-Channel MOSFET

Dec 2015

Thermal Resistance Characteristics

Symbol

Parameter

Typ.

Max.

Units

R

JC

Junction-to-Case

--

1.6

/W

R

JA

Junction-to-Ambient*

--

50

R

JA

Junction-to-Ambient

--

110

Symbol

Parameter

Value

Units

V

DSS

Drain-Source Voltage

600

V

I

D

Drain Current

– Continuous (T

)

5.0

A

Drain Current

– Continuous (T

)

3.2

A

I

DM

Drain Current

– Pulsed

(Note 1)

20

A

V

GS

Gate-Source Voltage

30

V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

110

mJ

I

AR

Avalanche Current

(Note 1)

5.0

A

E

AR

Repetitive Avalanche Energy

(Note 1)

7.8

mJ

P

D

Power Dissipation (T

)

2.5

W

Power Dissipation (T

)

- Derate above 25

78

W

0.62

W/

T

Operating and Storage Temperature Range

-55 to +150

T

L

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

BV

R

DS(on) typ

I

Originative New Design

Superior Avalanche Rugged Technology

Robust Gate Oxide Technology

Very Low Intrinsic Capacitances

Excellent Switching Characteristics

Unrivalled Gate Charge : 12.5 nC (Typ.)

Extended Safe Operating Area

Lower R

DS(ON)

100% Avalanche Tested