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BAT760 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BAT760 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 7 page ![]() 2004 Jan 26 3 Philips Semiconductors Product specification Schottky barrier diode BAT760 CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS Notes 1. Mounted on printed-circuit board 10 × 10 mm2 Cu. 2. Mounted on printed-circuit board 40 × 40 mm2 Cu. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VF continuous forward voltage see Fig.2 and note 1 IF = 10 mA 240 270 mV IF = 100 mA 300 350 mV IF = 1 A 480 550 mV IR reverse current see Fig.3 and note 1 VR =5V 5 10 µA VR =8V 7 20 µA VR = 15 V 10 50 µA Cd diode capacitance VR = 5 V; f = 1 MHz; see Fig.4 19 25 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient note 1 220 K/W note 2 180 K/W |
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