PIC16F877ATISLASHML datasheet(179/234 Pages) MICROCHIP

179 / 234 page

 2003 Microchip Technology Inc.

DS39582B-page 177

PIC16F87XA

IPD

Power-down Current(3,5)

D020

16LF87XA

—

7.5

µAVDD = 3.0V, WDT enabled,

-40

°C to +85°C

D020

16F87XA

—

10.5

µA

VDD = 4.0V, WDT enabled,

-40

°C to +85°C

VDD = 4.0V, WDT enabled,

-40

°C to +125°C (extended)

D021

16LF87XA

—

0.9

µAVDD = 3.0V, WDT disabled,

°C to +70°C

D021

16F87XA

—

1.5

µA

VDD = 4.0V, WDT disabled,

-40

°C to +85°C

VDD = 4.0V, WDT disabled,

-40

°C to +125°C (extended)

D021A

16LF87XA

0.9

µAVDD = 3.0V, WDT disabled,

-40

°C to +85°C

D021A

16F87XA

1.5

µA

VDD = 4.0V, WDT disabled,

-40

°C to +85°C

D023

∆IBOR

Brown-out

Reset Current(6)

—

200

µA

BOR enabled, VDD = 5.0V

17.1

DC Characteristics:

PIC16F873A/874A/876A/877A (Industrial, Extended)

PIC16LF873A/874A/876A/877A (Industrial) (Continued)

PIC16LF873A/874A/ 876A/877A

(Industrial)

Standard Operating Conditions (unless otherwise stated)

Operating temperature

-40°C

≤ TA ≤ +85°C for industrial

PIC16F873A/874A/876A/877A

(Industrial, Extended)

Standard Operating Conditions (unless otherwise stated)

Operating temperature

-40°C

≤ TA ≤ +85°C for industrial

-40°C

≤ TA ≤ +125°C for extended

Param

No.

Symbol

Characteristic/

Device

Min

Typ†

Max

Units

Conditions

Legend: Rows with standard voltage device data only are shaded for improved readability.

† Data in “Typ” column is at 5V, 25°C, unless otherwise stated. These parameters are for design guidance

only and are not tested.

Note 1:

This is the limit to which VDD can be lowered without losing RAM data.

The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O

pin loading, switching rate, oscillator type, internal code execution pattern and temperature, also have an

impact on the current consumption.

The test conditions for all IDD measurements in active operation mode are:

OSC1 = external square wave, from rail-to-rail; all I/O pins tri-stated, pulled to VDD;

MCLR = VDD; WDT enabled/disabled as specified.

The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is

measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD and VSS.

For RC osc configuration, current through REXT is not included. The current through the resistor can be

estimated by the formula Ir = VDD/2REXT (mA) with REXT in k

Ω.

Timer1 oscillator (when enabled) adds approximately 20

µA to the specification. This value is from

characterization and is for design guidance only. This is not tested.

The

∆ current is the additional current consumed when this peripheral is enabled. This current should be

added to the base IDD or IPD measurement.

When BOR is enabled, the device will operate correctly until the VBOR voltage trip point is reached.

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