BFC60

LAB

SEME

Prelim. 2/96

Characteristic

Test Conditions

Min.

Typ.

Max. Unit

1 2 3

3.05 (0.120)

2.54 (1.000)

10.67 (0.420)

9.65 (0.380)

5.33 (0.210)

4.83 (0.190)

4.83 (0.190)

3.56 (0.140)

1.40 (0.020)

0.51 (0.055)

3.73 (0.147)

3.53 (0.139) Dia.

1.78 (0.070)

0.99 (0.390)

1.02 (0.040)

0.38 (0.015)

2.54 (0.100)

No m.

5.08 (0.200)

No m.

0.66 (0.026)

0.41 (0.016)

2.92 (0.115)

2.03 (0.080)

2

TO220–AC Package Outline.

Dimensions in mm (inches)

Drain – Source Voltage

Continuous Drain Current

Pulsed Drain Current

Gate – Source Voltage

Total Power Dissipation

Operating and Storage Junction Temperature Range

f = 1MHz

N–CHANNEL

ENHANCEMENT MODE

HIGH VOLTAGE

ISOLATED

POWER MOSFETS

1500

0.1

0.2

±20

20

–55 to +150

V

A

A

V

W

°C

Drain – Source Breakdown Voltage

Drain – Source On State Resistance

Zero Gate Voltage Drain Current

Gate – Source Leakage Current

Cutoff Voltage

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn–on Time

Turn-off Time

Diode Forward Voltage

Forward Transfer Admittance

1500

140

200

100

±100

1.5

3.5

40

12

3.0

40

400

1.0

1.5

50

100

V

Ω

µA

nA

V

pF

ns

V

mS

1500V

0.1A

140

Ω

Ω

Pin 1 – Gate

Pin 2 – Drain

Pin 3 – Source