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DMNH6021SPSQ Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMNH6021SPSQ
Description  High Conversion Efficiency
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMNH6021SPSQ Datasheet(HTML) 4 Page - Diodes Incorporated

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DMNH6021SPSQ
Document number: DS38394 Rev.4 - 2
4 of 7
www.diodes.com
June 2016
© Diodes Incorporated
DMNH6021SPSQ
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0.045
0.05
-50
-25
0
25
50
75
100 125 150 175
V
= 4.5V
I = 12A
GS
D
V
=
V
I = 15A
GS
D
10
V
, SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
T = 125癈
A
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
T = 150癈
A
T = 175癈
A
T = -55癈
A
T = 25癈
A
T = 85癈
A
Q
(nC)
g, TOTAL GATE CHARGE
Figure 11 Gate Charge
0
2
4
6
8
10
0
4
8
12
16
20
V
= 30V
I =
A
DS
D
20
175°C
150°C
125°C
85°C
25°C
-55°C
T , JUNCTION TEMPERATURE (C)
Figure 8 Gate Threshold Variation vs. Junction Temperature
J

V
,
G
A
T
E
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
(
V
)
G
S
(t
h
)
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
-50
-25
0
25
50
75
100 125 150 175
I = 1mA
D
I = 250µA
D
10
100
1000
10000
0
5
10 15 20 25 30 35 40 45 50 55 60
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 Typical Junction Capacitance
f=1MHz
Ciss
Coss
Crss
T , Junction Temperature (°C)
J
Figure 10 Avalanche Energy
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
25
50
75
100
125
150
175
I = 10A
D
I
= 15A
D
I = 6A
D
TJ, JUNCTION TEMPERATURE (
oC)



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