GLT41316 datasheet(3/22 Pages) ETC

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G -LINK

GLT41316

64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE

June 1998 (Rev 2)

G-Link Technology Corporation

2701Northwestern Parkway

Santa Clara, CA 95051, U.S.A.

G-Link Technology Corporation, Taiwan

2F, No.12, R&D Rd. II, Science-Based Industrial Park,

Hsin Chu, Taiwan, R.O.C.

- 3 -

Absolute Maximum Ratings*

Capacitance*

TA=25

°C, V

CC=5V

±10%, V

SS=0V

Operating Temperature, TA (ambient)

.......................................-0

°C to +70°C

Storage Temperature(plastic)....-55

°C to +150°C

Voltage Relative to VSS...............-1.0V to + 7.0V

Short Circuit Output Current......................50mA

Power Dissipation......................................1.0W

Symbol

CIN1

CIN2

COUT

Parameter

Address Input

RAS , CAS , UW , LW , OE

Data Input/Output

Max.

Unit

*Note: Operation above Absolute Maximum Ratings

can adversely affect device reliability.

*Note: Capacitance is sampled and not 100% tested

Electrical Specifications

WE means UW and LW .

All voltages are referenced to GND.

After power up, wait more than 100

µs and then, execute eight CAS -before-RAS or RAS -only

refresh cycles as dummy cycles to initialize internal circuit.

Block Diagram :

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