BU20105S-M3SLASH45 datasheet(2/6 Pages) VISHAY

2 / 6 page

BU2006-M3, BU2008-M3, BU2010-M3

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Vishay General Semiconductor

Revision: 26-Jun-13

Document Number: 89298

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Note

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

Notes

(1) With 60 W air cooled heatsink

(2) Without heatsink, free air



RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Derating Curve Output Rectified Current

Fig. 2 - Forward Current Derating Curve

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Maximum instantaneous forward



voltage per diode (1)

IF = 10 A

TA = 25 °C

0.95

1.05

TA = 125 °C

0.85

0.95

Maximum reverse current per diode

rated VR

TA = 25 °C

-5.0

μA

TA = 125 °C

110

350

Typical junction capacitance per diode

4.0 V, 1 MHz

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

BU2006

BU2008

BU2010

UNIT

Typical thermal resistance

RJC (1)

2.4

°C/W

RJA (2)

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

BU2006-M3/45

4.76

Tube

BU2006-M3/51

4.76

250

Paper tray

BU20065S-M3/45

4.76

Tube

100

150

Case Temperature (°C)

125

With Heatsink

Sine-Wave, R-Load

C Measured at Device Bottom

Ambient Temperature (°C)

100

125

150

Without Heatsink

Sine-Wave, R-Load

Free Air, T

BU20105S-M3/45 Datasheet(PDF) 2 Page - Vishay Siliconix

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