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G2SB2-E3/51 Datasheet(PDF) 1 Page - Vishay Siliconix |
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G2SB2-E3/51 Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 5 page ![]() G2SB20, G2SB60, G2SB80 www.vishay.com Vishay General Semiconductor Revision: 16-Aug-13 1 Document Number: 88603 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Glass Passivated Single-Phase Bridge Rectifier FEATURES • UL recognition file number E54214 • Ideal for printed circuit boards • High surge current capability • Typical IR less than 0.1 μA • High case dielectric strength • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for monitor, TV, printer, SMPS, adapter, audio equipment, and home appliances application. MECHANICAL DATA Case: GBL Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked on body PRIMARY CHARACTERISTICS Package GBL IF(AV) 1.5 A VRRM 200 V, 600 V, 800 V IFSM 80 A IR 5 μA VF at IF = 0.75 V 1.0 V TJ max. 150 °C Diode variations In-Line Case Type GBL ~ ~ ~ ~ MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL G2SB20 G2SB60 G2SB80 UNIT Maximum repetitive peak reverse voltage VRRM 200 600 800 V Maximum RMS voltage VRMS 140 420 560 V Maximum DC blocking voltage VDC 200 600 800 V Maximum average forward rectified output current at TA = 25 °C IF(AV) 1.5 A Peak forward surge current single sine-wave superimposed on rated load IFSM 80 A Rating for fusing (t < 8.3 ms) I2t27 A2s Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL G2SB20 G2SB60 G2SB80 UNIT Maximum instantaneous forward voltage drop per diode 0.75 A VF 1.00 V Maximum DC reverse current at rated DC blocking voltage per diode TA = 25 °C IR 5.0 μA TA = 125 °C 300 |
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