RJP1CS07DWS-80 datasheet(2/4 Pages) RENESAS

2 / 4 page

RJP1CS07DWA / RJP1CS07DWS

Preliminary

R07DS0830EJ0400 R07DS0830EJ0400 Rev.4.00

Page 2 of 3

Sep 30, 2015

Electrical Characteristics (Datas below are measured values on a package configuration.)

(Tc = 25°C unless otherwise noted)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Zero gate voltage collector current

ICES

—

A

VCE = 1250 V, VGE = 0

Gate to emitter leak current

IGES

—

±1

A

VGE = ±30 V, VCE = 0

Gate to emitter cutoff voltage

VGE(off)

5.0

—

6.8

VCE = 10 V, IC = 5mA

Collector to emitter saturation voltage

VCE(sat)

—

1.80

2.25

IC = 150 A, VGE = 15 V Note2

Input capacitance

Cies

—

15.0

—

VCE = 25 V

VGE = 0

f = 1 MHz

Output capacitance

Coes

—

0.43

—

Reveres transfer capacitance

Cres

—

0.35

—

Total gate charge

—

895

—



VGE = 15 V

VCE = 600 V

IC = 150 A

Gate to emitter charge

Qge

—

140

—



Gate to collector charge

Qgc

—

490

—



Switching time Note3

td(on)

—

100

—

VCC = 600 V

IC = 150 A

VGE = ±15 V

Rg = 10

, Tc = 150 C

Inductive load

—

td(off)

—

600

—

150

—

Short circuit withstand time Note4

tsc

—

s

VCC

 720 V , VGE = 15 V

Tc = 150

C

Notes: 2. Pulse test.

3. Switching time test circuit and waveform are shown below.

4. Verified by design.

Switching Time Test Circuit

Waveform

Diode clamp

D.U.T

VCC

td(off)

td(on)

90%

10%

VGE

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