MRF18090AS datasheet(2/8 Pages) MOTOROLA

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MRF18090A MRF18090AS

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 100 µAdc)

V(BR)DSS

—

Vdc

Zero Gate Voltage Drain Current

(VDS = 26 Vdc, VGS = 0 Vdc)

IDSS

—

µAdc

Gate–Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS

—

µAdc

ON CHARACTERISTICS

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 750 mAdc)

VGS(Q)

2.5

3.7

4.5

Vdc

Drain–Source On–Voltage

(VGS = 10 Vdc, ID = 1 Adc)

VDS(on)

—

0.1

—

Vdc

Forward Transconductance

(VDS = 10 Vdc, ID = 3 Adc)

gfs

—

7.2

—

DYNAMIC CHARACTERISTICS

Reverse Transfer Capacitance

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss

—

4.2

—

FUNCTIONAL TESTS (In Motorola Test Fixture)

Common–Source Amplifier Power Gain @ 90 W (1)

(VDD = 26 Vdc, IDQ = 750 mA, f = 1805 – 1880 MHz)

Gps

12.0

13.5

—

Drain Efficiency @ 90 W (1)

(VDD = 26 Vdc, IDQ = 750 mA, f = 1805 – 1880 MHz)

—

Input Return Loss (1)

(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA,

f = 1805 – 1880 MHz)

IRL

—

–10

Output Mismatch Stress

(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA VSWR = 10:1,

All Phase Angles at Frequency of Tests)

No Degradation In Output Power

Before and After Test

(1) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1800 band, ensuring batch–to–batch

consistency.

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