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BUZ11A Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUZ11A Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor BUZ11A DESCRIPTION ·Static Drain-Source On-Resistance : RDS(on) = 0.045Ω(Max) ·Avalanche rugged technology ·High current capability ·175℃ Operating Temperature APPLICATIONS ·High current,high speed switching ·Solenoid and relay drivers ·Regulators ·DC-DC & DC-AC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 50 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=37℃ 26 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W PDF pdfFactory Pro www.fineprint.cn |
Similar Part No. - BUZ11A |
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Similar Description - BUZ11A |
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