DMN53D0LDW

Document number: DS37072 Rev. 2 - 2

4 of 5

www.diodes.com

June 2014

© Diodes Incorporated

DMN53D0LDW

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Figure 7 Gate Threshold Variation vs. Ambient Temperature

J

°

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

I= 1mA

D

I = 250µA

D

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 8 Diode Forward Voltage vs. Current

T = 150°C

A

0

0.2

0.4

0.6

0.8

1.0

0

0.3

0.6

0.9

1.2

1.5

T = 125°C

A

T = 85°C

A

T= 25°C

A

T = -55°C

A

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 9 Typical Junction Capacitance

1

10

100

0

5

10

15

20

25

30

35

40

f = 1MHz

Q(nC)

Figure 10 Gate Charge

0

2

4

6

8

10

0

0.3

0.6

0.9

1.2

1.5

V

= 10V

I=

A

DS

D

250m

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

SOT363

Dim Min

Max

Typ

A

0.10

0.30

0.25

B

1.15

1.35

1.30

C

2.00

2.20

2.10

D

0.65 Typ

F

0.40

0.45 0.425

H

1.80

2.20

2.15

J

0

0.10

0.05

K

0.90

1.00

1.00

L

0.25

0.40

0.30

M

0.10

0.22

0.11

α

0°

8°

-

All Dimensions in mm

A

M

J

L

D

B C

H

K

F