Philips Semiconductors

BSH108

N-channel enhancement mode field-effect transistor

Product specification

Rev. 02 — 25 October 2000

2 of 13

9397 750 07652

© Philips Electronics N.V. 2000. All rights reserved.

5.

Quick reference data

6.

Limiting values

Table 2:

Quick reference data

Symbol Parameter

Conditions

Typ

Max

Unit

drain-source voltage (DC)

−

30

V

drain current (DC)

−

1.9

A

total power dissipation

−

0.83

W

junction temperature

−

150

°C

drain-source on-state resistance

77

120

m

Ω

102

140

m

Ω

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

drain-source voltage (DC)

−

30

V

drain-gate voltage (DC)

30

V

gate-source voltage (DC)

−±20

V

drain current (DC)

−

1.9

A

−

1.2

A

peak drain current

−

7.5

A

total power dissipation

−

0.83

W

storage temperature

−65

+150

°C

operating junction temperature

−65

+150

°C

Source-drain diode

source (diode forward) current (DC)

−

0.83

A

−

3.3

A