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IFN860

Dual N-Channel Silicon Junction Field-Effect Transistor

Reverse Gate Source & Reverse Gate Drain Voltage

– 20 V

Continuous Forward Gate Current

50 mA

Continuous Device Power Dissipation

400 mW

Power Derating

2.3 mW/°C

Storage Temperature Range

– 65°C to 200°C

TOÐ71 Package

Dimensions in Inches (mm)

Pin Configuration

1 Source, 2 Drain, 3 Gate, 5 Source,

6 Drain, 7 Gate

At 25°C free air temperature:

IFN860

Process NJ450L

Static Electrical Characteristics

Min

Typ

Max

Unit

Test Conditions

Gate Source Breakdown Voltage

– 20

V

Gate Reverse Leakage Voltage

3nA

Gate Source Cutoff Voltage

– 0.3

– 3

V

Drain Saturation Current (Pulsed)

10

mA

Differential Gate Source Voltage

25

mV

Dynamic Electrical Characteristics

Transconductance

25

40

mS

f = 1 kHz

Common Source Input Capacitance

30

35

pF

f = 1 MHz

Common Source Reverse Transfer

17

20

pF

f = 1 MHz

Capacitance

Equivalent Short Circuit

2

nV/

f = 1 kHz

Input Noise Voltage

¥ Low-Noise Audio Amplifier

¥ Equivalent to Crystalonics

CD860

1000 N. Shiloh Road, Garland, TX 75042

www.interfet.com

Databook.fxp

1/14/99 12:22 PM

Page B-43