B-46

01/99

IFN5564, IFN5565, IFN5566

N-Channel Dual Silicon Junction Field-Effect Transistor

¥ Wide Band Differential

Amplifier

¥ Commutators

Reverse Gate Source & Reverse Gate Drain Voltage

– 40 V

Continuous Forward Gate Current

50 mA

Continuous Device Power Dissipation

650 mW

Power Derating

3.3 mW/°C

TOÐ71 Package

Dimensions in Inches (mm)

Pin Configuration

1 Source, 2 Drain, 3 Gate, 4 Omitted,

5 Source, 6 Drain, 7 Gate, 8 Omitted

At 25°C free air temperature:

IFN5564

IFN5565

IFN5566

Process NJ72

Static Electrical Characteristics

Min

Max

Min

Max

Min

Max

Unit

Test Conditions

Gate Source Breakdown Voltage

– 40

– 40

– 40

V

Gate Leakage Voltage

– 100

– 100

– 100

pA

– 200

– 200

– 200

nA

Gate Source Cutoff Voltage

– 0.5

– 3

– 0.5

– 3

– 0.5

– 3

V

Gate Source Voltage

111

V

Saturation Current (Pulsed)

530530

530

mA

Static Drain Source ON Resistance

100

100

100

Ω

Dynamic Electrical Characteristics

Common Source

7000 12500 7000 12500 7000 12500 µhmo

f = 1 kHz

Forward Transconductance

7000

7000

7000

µhmo

f = 100 MHz

Common Source Output Transconductance

45

45

45

µhmo

f = 1 kHz

Common Source Input Capacitance

12

12

12

pF

f = 1 MHz

Common Source Reverse Transfer Capacitance

333

pF

f = 1 MHz

Noise Figure

NF

1

1

1

dB

f = 10 Hz

Equivalent Short Circuit Input Noise Voltage

50

50

50

nV/

√Hz

f = 10 Hz

Characteristics

Saturation Drain Current Ratio (Pulsed)

0.95

1

0.95

1

0.95

1

–

–

Differential Gate Source Voltage

5

10

20

mV

Gate Source Voltage Differential Drift

10

25

50

µV/°C

∆T

102550

µV/°C

Transconductance Ratio (Pulsed)

0.95

1

0.9

1

0.9

1

–

–

1000 N. Shiloh Road, Garland, TX 75042

www.interfet.com

Databook.fxp

1/13/99 2:09 PM

Page B-46