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U290 Datasheet(PDF) 1 Page - InterFET Corporation |
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U290 Datasheet(HTML) 1 Page - InterFET Corporation |
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1 / 1 page  01/99 B-65 U290, U291 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage – 30 V Continuous Forward Gate Current 100 mA Continuous Device Power Dissipation 500 mW Power Derating 4 mW/°C TOÐ52 Package Dimensions in Inches (mm) Pin Configuration 1 Source, 2 Drain, 3 Gate & Case At 25°C free air temperature: U290 U291 Process NJ1800D Static Electrical Characteristics Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS – 30 – 30 V IG = – 1 µA, VDS = ØV Gate Reverse Current IGSS – 1 – 1 nA VGS = – 15V, VDS = ØA – 1 – 1 µA VGS = – 15V, VDS = ØA TA = 150°C Gate Source Cutoff Voltage VGS(OFF) – 4 – 10 – 1.5 – 4.5 V VDS = 15V, ID = 3 nA Drain Saturation Current (Pulsed) IDSS 500 200 mA VDS = 10V, VGS = ØV Drain Cutoff Current ID(OFF) 11 nA VDS = 5V, VGS = – 10V 11 µA VDS = 5V, VGS = – 10V TA = 150°C Drain Source ON Voltage VDS(ON) 30 70 mV VGS = ØV, ID = 10 mA Static Drain Source ON Resistance rDS(ON) 1327 Ω VGS = ØV, ID = 10 mA Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) 1327 Ω VGS = ØV, ID = Ø f = 1 kHz Drain Gate OFF Capacitance Cdgo 30 30 pF VDG = 15V, IS = ØV f = 1 MHz Source Gate OFF Capacitance Csgo 30 30 pF VDG = 15V, IS = ØV f = 1 MHz Source Gate Plus Drain Gate Ciss 160 160 pF VDG = ØV, VGS = ØV f = 1 MHz Switching Characteristics VDD = 1.5V, ID(ON) = 30 mA Turn ON Delay Time td(on) 15 15 ns RL = 50Ω Rise Time tr 20 20 ns VGS(ON) = ØV Turn OFF Delay Time td(off) 15 15 ns (U290) VGS(OFF) = – 12 V Fall Time tf 20 20 ns (U291) VGS(OFF) = – 7V ¥ Choppers ¥ Low On Resistance Switches 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-65 |
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