MMBT2907 datasheet(2/2 Pages) DIOTEC

2 / 2 page

MMBT2907 / MMBT2907A

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)

- IC = 150 mA, - IB = 15 mA

- IC = 500 mA, - IB = 50 mA

- VCEsat

–

0.4 V

1.6 V

Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)

- IC = 150 mA, - IB = 15 mA

- IC = 500 mA, - IB = 50 mA

- VBEsat

–

1.3 V

2.6 V

Collector-Base cutoff current – Kollektor-Basis-Reststrom

- VCB = 50 V, (E open)

MMBT2907

MMBT2907A

- ICBO

–

20 nA

10 nA

- VCB = 50 V, Tj = 125°C, (E open)

- ICBO

–

20 µA

Gain-Bandwidth Product – Transitfrequenz

- VCE = 20 V, - IC = 50 mA, f = 100 MHz

200 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- VCB = 10 V, IE = ie = 0, f = 1 MHz

CCBO

–

8 pF

Emitter-Base Capacitance – Emitter-Basis-Kapazität

- VEB = 2 V, IC = ic = 0, f = 1 MHz

CEBO

–

30 pf

Switching times – Schaltzeiten (between 10% and 90% levels)

turn on

delay time

rise time

- VCC = 30 V, - VBE = 1.5 V

- IC = 150 mA, - IB1 = 15mA

ton

–

45 ns

–

10 ns

–

40 ns

turn off

storage time

fall time

- VCC = 30 V, - IC = 150 mA,

- IB1 = - IB2 = 15 mA

toff

–

100 ns

–

80 ns

–

30 ns

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

< 420 K/W 1)

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

MMBT2222 / MMBT2222A

Marking - Stempelung

MMBT2907 = 2B

MMBT2907A = 2F

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

http://www.diotec.com/

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